PhD Thesis "Evaluation of the impact of crystal defects in SiC epitaxy layers on the electrical behavior of SiC based power devices as well as strategies for their avoidance by adaption of the epitaxial growth"

Infineon Technologies Austria AG
  • Villach
  • Vollzeit, Diplomarbeit, Dissertation
  • Einsteiger
  • 14.6.2018

PhD Thesis "Evaluation of the impact of crystal defects in SiC epitaxy layers on the electrical behavior of SiC based power devices as well as strategies for their avoidance by adaption of the epitaxial growth"

At a glance

With this PhD thesis we are offering the opportunity to join Infineon´s SiC EPI development team working in one of the most challenging topics of SiC technology. With SiC being one of the fastest growing semiconductor materials, reduction of structural defects is becoming a necessity in order to improve the performance and characteristics of SiC devices. If you have a strong knowledge of material science, semiconductor device physics, structural and electrical characterization tools, you have the opportunity to join Infineon as leading SiC technology company.

Quick info


Entry level
Fresh Graduate (without work experience)

Job ID

Aug 01, 2018

Full time


Job description

Silicon Carbide has a continuously increasing importance on Infineon's power device technology portfolio, due to the unique ability of SiC devices to push further the limits of energy efficiency, switching frequency, power density and reduced system cost. Infineon Austria based in Villach is the heart of SiC activities and is leading many innovation projects of SiC technology of the upcoming years. One of the most significant and key issues of next generation diodes as well as MOSFETs, is the reduction of structural defects in SiC epitaxial layers. Thus, an evaluation and correlation of those defects with current and future SiC devices' characteristics, deeper understanding of formation and propagation mechanisms of those device killing defects as well as a strategy for further reduction during the epitaxy process is required.

In your new role you will:

  • Be an active member within Infineon´s SiC Epi development team
  • Achieve a deep understanding of SiC technology, focusing on SiC Epitaxy process, defect structural analysis and correlation with SiC device performance
  • Interact with engineers working on various fields and develop a hands-on approach
  • Implement continuous improvements in the detection, analysis and evaluation of structural defects in SiC epitaxial layer

Start: 01.08.2018 (or later)
Full-time employment (38.5 hrs/week)
Duration: 3 years


We are looking for students with the willingness to work in a challenging environment within a highly motivated international team.

You are best equipped for this task if you have:

  • Master´s degree in Physics, Materials Science, electrical engineering or similar
  • Ideally knowledge in the fields of semiconductors, SiC material and semiconductor processing
  • Previous experience on material characterization techniques, especially structural and electrical characterization
  • A hands-on approach, ability to work independent with good organization and communication skills
  • Good English and German skills

Please attach the following documents to your application:

  • Your CV
  • Motivation letter
  • Copy of your final degree certificate if already available
  • Otherwise: copy of your latest study transcript

This position is subject to the collective agreement for workers and employees in the electrical and electronics industry. The salary for this position is EUR 2.675,-- gross p.m.(full-time basis).

About Us

Part of your life. Part of tomorrow.

We make life easier, safer and greener - with technology that achieves more, consumes less and is accessible to everyone. Microelectronics from Infineon is the key to a better future. Efficient use of energy, environmentally-friendly mobility and security in a connected world - we solve some of the most critical challenges that our society faces while taking a conscientious approach to the use of natural resources.

The Frontend (FE) cluster offers a broad range of manufacturing competence specialized in high-quality logic products. The portfolio represents Power, Bipolar, Sensor, Passive and Diode technologies as well as CMOS, RF-CMOS and embedded flash technologies.
The manufacturing sites in Dresden, Kulim, Regensburg and Villach are committed to Operational Excellence with strong customer focus

The City of Villach is located in the center of Carinthia, Austria's southernmost province, in close proximity to the Italian and Slovenian border. Due to its particular geographic location and the outstanding natural beauty of the region, Villach and the whole province of Carinthia have for generations been popular holiday destinations for people from all over the world. Its unique landscape combines mountains and valleys, lakes and rivers, city and countryside. In addition to the favorable geographic location, living in Austria also has many social, health-care-related and economic perks. The country's social and health care system is among the best in the world and for decades numerous international surveys have singled out Austria as a particularly safe and wealthy country with a high quality of life. Villach benefits from its status as a "small town", offering everyday living at affordable prices in an outstanding setting. So it's no surprise that the city on the Drau is considered the "home of work-life balance".

Find out what you like most about Villach and join us:

What we offer you in Villach

Almost 3.200 people work at four different sites in Austria.

Find out more about sites in Austria Apply now!

Infineon Technologies Austria AG

Elektronik, Automatisation
501+ Mitarbeiter

Über uns

Wir machen das Leben einfacher, sicherer und umweltfreundlicher Infineon bündelt in Österreich als einziger Konzernstandort neben Deutschland die Kompetenzen für Forschung & Entwicklung, Fertigung sowie globale Geschäftsverantwortung. An den Standorten Villach, Klagenfurt, Graz…